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  inchange semiconductor isc product specification isc silicon npn power transistor BU111 description collector-emitter sustaining voltag- : v ceo(sus) = 300v(min) low collector saturation voltage- : v ce(sat) = 1.5v(max)@ i c = 2.5a applications designed for use in color tv receivers chopper supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 6 v i c collector current-continuous 6 a i cm collector current-peak repetitive 8 a i b b base current 3 a p c collector power dissipation @ t c =25 50 w t j junction temperature 200 t stg storage temperature range -65~200 isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistor BU111 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b = 0 200 v v (br)ebo emitter-base breakdown voltage i e = 1ma ;i c = 0 6 v v ce( sat ) collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v be( sat ) base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.4 v i cbo collector cutoff current v cb = 400v; i e =0 0.1 ma i ebo emitter cutoff current v eb = 6v; i c =0 0.1 ma f t current-gain?bandwidth product i c = 0.5a ; v ce = 10v 10 mhz isc website www.iscsemi.cn 2 www.datasheet.co.kr datasheet pdf - http://www..net/


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